Samsung has released a built-in flash memory of 512 GB for smartphones
Samsung Electronics announced the launch of a series of first-ever embedded embedded flash memory eUFS (embedded Universal Flash Storage) capacity of 512 GB for smartphones and tablets.
They are built on the basis of the latest microchips 64-layer V-NAND flash memory with a density of 512 Gbit.
The manufacturer emphasizes that the new 512 GB eUFS flash memory modules, consisting of eight 512-Gbit V-NAND 64-layer flash memory chips and a controller, are identical in size to the predecessors with a capacity of 256 GB (they used 48-layer flash- memory density of 256 Gbit), released in February 2016. Thus, in less than two years, Samsung engineers managed to double the storage density.
According to the manufacturer, more capacious flash drives will give users even more opportunities to store and work with high-quality content. For example, the flagship smartphone with a storage of this volume is capable of accommodating 130 video clips of about 10 minutes each, taken in a resolution of 3840x260 pixels. This is ten times more than it can accommodate a modern smartphone with 64 GB of flash memory.
With regard to speed and performance, the speed of sequential reading in new Samsung modules reaches 860 MB / s, sequential recording - 255 MB / s. A movie with a resolution of 1920x1080 pixels, 5 GB in size can be copied in 6 seconds - eight times faster than when copying from a microSD memory card. The maximum performance on random access operations in read mode is stated as 42,000 IOPS, in the write mode, 40,000 IOPS. This is approximately 400 times higher than that of microSD memory cards (about 100 IOPS).
Samsung plans to increase the rate of release of a new 64-layer V-NAND 512 Gb flash memory in the conditions of expanding the production of microcircuits of the previous generation with a density of 256 Gbit.
When the market will be the first smartphones equipped with 512 GB of flash memory, while there is no data.
Source: Samsung