The global GaN RF devices market will continue to be driven by GaN’s wide bandgap property that encourages innovation, growing demand for GaN RF devices in aerospace, defense & military verticals, and successful implementation of GaN technology in RF-power electronics. This report, compiled by Fact.MR, provides in-depth analysis of the global GaN RF devices market for the forecast period 2017-2026, offering key insights on the growth prospects of the market.
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GaN RF Technology – An Ideal Selection for Network Service Providers
Proliferation of next generation LTE wireless networks is considered to be a key factor propelling demand for GaN RF devices. Continuous rise in data consumption has fuelled expansion of commercial networks, prompting network carriers in adopting next generation LTE networks including 4G and 5G. High frequency data bandwidth connections of GaN RF technology has made it an ideal selection for network service providers. Deployment of GaN RF devices is likely to enable LTE devices in providing higher speeds to allow consumers download & upload content such as photographs and music, as well as watch online TV shows and play online games on maximum frequency bands. In addition, GaN RF devices ensure the device’s ability to generate maximum frequency at necessary frequency band, preventing interferences from other frequency bands.
Proliferation of IoT is expected to emerge as one of the popular trends in the GaN RF devices market. Successful implementation of IoT needs data transfer over the network, deprived of human-to-computer interaction. Micro-electrical-mechanical systems and sensors have become an integral part of the IoT devices, and are expected to have a positive influence on demand for semiconductors. Increasing implementation of IoT has resulted into signal congestion, thereby creating the requirement for GaN technology, which can amplify the bandwidth, capacity and power required for communication between interconnected devices.
According to Fact.MR’s new report, the global market for GaN RF devices is poised to register a splendid rise through the forecast period (2017-2026). Over US$ 1,600 Mn worth of GaN RF devices are estimated to be sold around the world by 2026-end.
Key Research Findings from Fact.MR’s Report
Telecommunications sector will remain the most lucrative end-user of GaN RF devices
Discrete GaN RF devices are anticipated to remain preferred among products in the market
Competition Tracking
Most of the vendors in the GaN RF devices market have similar offerings, competing primarily in terms of key factors including support services, performance & quality, price and innovation. Requirement of enormous capital investment for development, innovation, and research for making advancements in GaN RF Devices remains a major concern for new market entrants. This will further intensify the competition between existing players. Key market participants mapped by Fact.MR’s report include Raytheon, Sumitomo Electric, Bosch, STMicroelectronics, Hitachi, Toshiba, Mitsubishi Electric, Panasonic, Renesas, and Infineon.
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Table of Content
- Global Outlook
- Global GaN RF Devices Market - Executive Summary
- Global GaN RF Devices Market Overview 3.1. Introduction 3.1.1. Global GaN RF Devices Market Taxonomy 3.1.2. Global GaN RF Devices Market Definition 3.2. Global GaN RF Devices Market Size (US$ Mn) and Forecast, 2012-2026 3.2.1. Global GaN RF Devices Market Y-o-Y Growth 3.3. Global GaN RF Devices Market Dynamics 3.4. SiC and GaN-on-Si Device Market Comparison 3.5. Semiconductor Industry Segmentation 3.6. Power Discretes and Modules Competitive Comparison 3.7. WBG Material Cost and Wafer Size Comparison 3.8. Application for GaN Devices in RF Electronic System 3.9. Key Participants Market Presence (Intensity Map) By Region
- Global GaN RF Devices Market Analysis and Forecast 2012-2026 4.1. Global GaN RF Devices Market Size and Forecast By Product Type, 2012-2026 4.1.1. Module Market Size and Forecast, 2012-2026 4.1.1.1. Revenue (US$ Mn) Comparison, By Region 4.1.1.2. Market Share Comparison, By Region 4.1.1.3. Y-o-Y growth Comparison, By Region 4.1.2. Discrete Market Size and Forecast, 2012-2026 4.1.2.1. Revenue (US$ Mn) Comparison, By Region 4.1.2.2. Market Share Comparison, By Region 4.1.2.3. Y-o-Y growth Comparison, By Region 4.2. Global GaN RF Devices Market Size and Forecast By End User, 2012-2026 4.2.1. Wireless Infrastructure Market Size and Forecast, 2012-2026 4.2.1.1. Revenue (US$ Mn) Comparison, By Region 4.2.1.2. Market Share Comparison, By Region 4.2.1.3. Y-o-Y growth Comparison, By Region 4.2.2. Radars and Avionics Market Size and Forecast, 2012-2026 4.2.2.1. Revenue (US$ Mn) Comparison, By Region 4.2.2.2. Market Share Comparison, By Region 4.2.2.3. Y-o-Y growth Comparison, By Region 4.2.3. Power Storage Market Size and Forecast, 2012-2026
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